Yangzhou Genesis Microelectronics Co., Ltd.

schottky diode chips (BAS70)

Detailed Product Description NOPC(mW)VR(V)IR (μA) VF (V)(PF)(mm×mm)trr(ns)5 V10 V20 V30 V50 V1mA40mA100 mA1A3A6BAS7025070 0.10.41 2.00.23×0.23SOT-235 We offer a series of high-frequency and small-signal transistor...

1N5819/ Schottky Diode Chips

Detailed Product Description Pressure welding zone size 620μm × 620μm Chip thickness 200 ± 20μm Blade slot width 80μm Back: Au 1.4 ± 0.2μm ...

DK43 switch transistors for energy-saving lamp&ballast

Detailed Product Description Center Center 17, 3, 0, 0, 20, 48, 3, 0 Center PNP/NPNPCM (W)ICM (A)BVCEO (V)BVCBO (V)BVEBO (V)IC (A)VCE (V)minMaxIC (A)IB (A)max (V)IC (A)VCE (V)f (MHZ)min (MHZ)DIE SIZE (mm2)PACKAGENPN30, 401.5...

DK45 switch transistors for energy-saving lamp&ballast

Detailed Product Description Center Center 17, 3, 0, 0, 20, 48, 3, 0 Center PNP/NPNPCM (W)ICM (A)BVCEO (V)BVCBO (V)BVEBO (V)IC (A)VCE (V)minMaxIC (A)IB (A)max (V)IC (A)VCE (V)f (MHZ)min (MHZ)DIE SIZE (mm2)PACKAGENPN684 22035090.51010602.0...

DARLINGTON TRANSISTOR YZ61

Detailed Product Description PNP/NPNPcm (W)Icm (A)BVCEO (V) maxBVCBO (V) maxBVEBO (V)minICEO (mA) maxVCE(sat)(V) IC(A)VCE(sat)(V) IB(mA)VCE(sat)(V) maxhFE Ic(A)hFE VCE(V)hFE minhFE maxPACKAGENPN2002550~200300~80053151503155500F4 ...

DARLINGTON TRANSISTOR YZ161

Detailed Product Description PNP/NPNPcm (W)Icm (A)BVCEO (V) maxBVCBO (V) maxBVEBO (V)minICEO (mA) maxVCE(sat)(V) IC(A)VCE(sat)(V) IB(mA)VCE(sat)(V) maxhFE Ic(A)hFE VCE(V)hFE minhFE maxPACKAGENPN20025300~500300~80053151503155500F4 ...

TIP32 power transistor chips

Detailed Product Description NOPC(mw)IC(mA)BVCEO(V)BVCBO(V)BVEBO(V)hFEVCE(sat) (V) fT(MHZ)(mm×mm)minmax930W-3.0A-40∼-100-60∼-120-640320-1.531.4×1.4TO-220We offer a series of high-frequency and small-signal transistor chips, switching diode chips, schottky chips,...